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L-band tapered-ridge SIW-to-CPW transion

dc.contributor.otherInternational Conference on Actual Problems of Electron Devices Engineering (APEDE) (2014 : Saratov, Russia)
dc.contributor.upauthorSmith, James Nathan
dc.contributor.upauthorStander, Tinus
dc.date.accessioned2015-10-07T08:32:58Z
dc.date.available2015-10-07T08:32:58Z
dc.date.issued2014
dc.descriptionPaper presented at the 2014 International Conference on Actual Problems of Electron Devices Engineering (APEDE) , 25-26 Sept. 2014, Saratov, Russia.en_ZA
dc.description.abstractA tapered ridge transition between coplanar waveguide and substrate-integrated waveguide is presented. The taper is implemented through staircase metallization across 10 layers of conventional RF substrate with sidewall expansion and upper cut-out using Vivaldi-type exponential tapers. Fractional bandwidth of 36% is achieved in the L-band, with insertion loss of 0.5 dB and return loss of 15 dB.en_ZA
dc.description.librarianhb2015en_ZA
dc.description.urihttp://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6940442en_ZA
dc.identifier.citationSmith, JN & Stander, T 2014, 'An L-band tapered-ridge SIW-to-CPW trasition', 2014 International Conference on Actual Problems of Electron Devices Engineering (APEDE) , 25-26 Sept. 2014, Saratov, Russia, pp. 171-177.en_ZA
dc.identifier.isbn978-1-4799-3437-9
dc.identifier.other10.1109/APEDE.2014.6958741
dc.identifier.urihttp://hdl.handle.net/2263/50171
dc.language.isoenen_ZA
dc.publisherInstitute of Electrical and Electronics Engineersen_ZA
dc.rights© 2014 IEEEen_ZA
dc.subjectTapered ridge transitionen_ZA
dc.subjectCoplanar waveguideen_ZA
dc.subjectSubstrate-integrated waveguideen_ZA
dc.titleL-band tapered-ridge SIW-to-CPW transionen_ZA
dc.typePresentationen_ZA

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